Oxide sintered body and sputtering target

ABSTRACT

An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In 2 O 3  bixbyite structure.

TECHNICAL FIELD

The invention relates to an oxide sintered body that includes indiumoxide and gallium solid-solved therein, a sputtering target thatincludes the oxide sintered body, a thin film produced using thesputtering target, and a thin film transistor that includes the thinfilm.

BACKGROUND ART

In recent years, development of display devices has rapidly progressed,and various display devices such as a liquid crystal display device andan EL display device have been extensively used for office automationequipment such as a personal computer and a word processor. Thesedisplay devices have a sandwich structure in which a display element isdisposed between transparent conductive films.

A silicon-based semiconductor film is mainly used for a switchingelement that drives a display device. This is because a silicon-basedthin film exhibits excellent stability, excellent workability, a highswitching speed, and the like. A silicon-based thin film is generallyformed by chemical vapor deposition (CVD).

An amorphous silicon-based thin film has a problem in that a video orthe like cannot be displayed at a high frame rate due to a relativelylow switching speed. A crystalline silicon-based thin film achieves arelatively high switching speed, but requires a high temperature of 800°C. or more, laser heating, or the like for crystallization.Specifically, a large amount of energy and a large number of steps arerequired for producing a crystalline silicon-based thin film. Asilicon-based thin film exhibits excellent performance as a voltageelement, but shows a change in characteristics with time when causing acurrent to flow therethrough.

Therefore, use of a film other than a silicon-based thin film has beenstudied.

A transparent semiconductor thin film formed of indium oxide, galliumoxide, and zinc oxide, and a transparent semiconductor thin film formedof zinc oxide and magnesium oxide have been proposed as a transparentsemiconductor film that exhibits excellent stability as compared with asilicon-based thin film, and has a light transmittance equal to that ofan ITO film, and as a target used to produce such a transparentsemiconductor film (e.g., Patent Document 1).

Patent Document 2 discloses a composition that includes indium oxide andgallium oxide as the main components, and contains an InGaO₃ compound.Patent Document 2 relates to a transparent conductive film.

Patent Document 3 discloses an In₂O₃ transparent conductive film thatcontains 1 to 10 atom % of gallium (Ga). The transparent conductive filmdisclosed in Patent Document 3 is produced by cosputtering in a state inwhich gallium metal is disposed on an In₂O₃ target.

Patent Document 4 discloses a sintered body composition for atransparent conductive film that has a Ga/(In+Ga) ratio of 0.35 or moreand less than 1.0, and includes a (Ga,In)₂O₃ phase. Patent Document 5discloses an oxide sintered body for a transparent conductive film thathas a Ga/(In+Ga) ratio of 0.65 or more and less than 1.0, and includes a(Ga,In)₂O₃ phase.

Patent Document 6 discloses an indium oxide-gallium oxide sintered bodythat contains 49.1 to 65 atom % of gallium. Patent Document 7 disclosesa sputtering target using a sintered body having a Ga/In ratio of 0.97to 1.86. Patent Document 8 discloses an indium oxide-gallium oxidesintered body that contains 35 to 45 atom % of gallium, and PatentDocument 9 discloses an indium oxide-gallium oxide sintered body thatcontains 15 to 49 atom % of gallium.

However, a crystalline oxide semiconductor film formed of indium oxideand gallium oxide cannot be obtained when the gallium content is withinthe ranges disclosed in Patent Documents 6 to 9. Moreover, when usingthe compositions disclosed in Patent Documents 6 to 9, an InGaO₃ crystalphase that exhibits high insulating properties may be produced, so thatan abnormal discharge or nodules may occur during sputtering.

An object of the invention is to provide a non-silicon-basedsemiconductor thin film that may be used for a thin film transistor, anda sputtering target used to produce the non-silicon-based semiconductorthin film. Another object of the invention is to provide a thin filmtransistor that includes a novel non-silicon-based semiconductor thinfilm.

RELATED-ART DOCUMENT Patent Document

-   Patent Document 1: JP-A-2004-119525-   Patent Document 2: JP-A-7-182924-   Patent Document 3: JP-A-9-50711-   Patent Document 4: JP-A-2007-277039-   Patent Document 5: JP-A-2007-210823-   Patent Document 6: JP-A-2007-224386-   Patent Document 7: JP-A-2007-113026-   Patent Document 8: JP-A-2005-347215-   Patent document 9: JP-A-9-259640

SUMMARY OF THE INVENTION

The invention provides the following oxide sintered body, sputteringtarget, oxide thin film, thin film transistor, and methods of producingthe same.

1. An oxide sintered body including indium oxide and galliumsolid-solved therein, the oxide sintered body having an atomic ratio“Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in anamount of 80 atom % or more based on total metal atoms, and having anIn₂O₃ bixbyite structure.2. The oxide sintered body according to 1, the oxide sintered bodyhaving an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.10.3. The oxide sintered body according to 1, the oxide sintered bodyhaving an atomic ratio “Ga/(Ga+In)” of 0.005 to 0.08.4. The oxide sintered body according to any one of 1 to 3, wherein thebixbyite structure has a lattice constant of 10.05 Å or more and lessthan 10.118 Å.5. The oxide sintered body according to any one of 1 to 4, the oxidesintered body having a density of 6.5 to 7.1 g/cm³.6. The oxide sintered body according to any one of 1 to 5, the oxidesintered body having a bulk resistivity of 10 mΩcm or less.7. The oxide sintered body according to any one of 1 to 6, whereindispersed gallium aggregates have a diameter of less than 1 μm.8. The oxide sintered body according to any one of 1 to 7, the oxidesintered body having a content of metal ions having a positive valenceof 4 or more of 100 atomic ppm or less.9. The oxide sintered body according to any one of 1 to 8, the oxidesintered body having a content of metal ions having a positive valenceof 2 or less of 100 atomic ppm or less, the content of metal ions havinga positive valence of 4 being equal to or lower than the content ofmetal ions having a positive valence of 2.10. The oxide sintered body according to any one of 1 to 9, furtherincluding one or two or more oxides selected from yttrium oxide,scandium oxide, aluminum oxide, and boron oxide.11. The oxide sintered body according to 10, the oxide sintered bodyhaving a content of the one or two or more oxides selected from yttriumoxide, scandium oxide, aluminum oxide, and boron oxide, of 0.01 to 5atom %.12. A method of producing the oxide sintered body according to any oneof 1 to 11, the method including mixing an indium compound powder havingan average particle size of less than 2 μm with a gallium compoundpowder having an average particle size of less than 2 μm in an atomicratio “Ga/(In+Ga)” of 0.001 to 0.12, shaping the resulting mixture, andfiring the resulting shaped product at 1200 to 1600° C. for 2 to 96hours.13. The method according to 12, wherein the shaped product is fired inan oxygen atmosphere or under pressure.14. A sputtering target including the oxide sintered body according toany one of 1 to 11.15. An oxide thin film formed using the sputtering target according to14.16. An oxide thin film including indium oxide and gallium solid-solvedtherein, the oxide thin film having an atomic ratio “Ga/(Ga+In)” of0.001 to 0.12, containing indium and gallium in an amount of 80 atom %or more based on total metal atoms, and having an In₂O₃ bixbyitestructure.17. The oxide thin film according to 16, the oxide thin film having anatomic ratio “Ga/(Ga+In)” of 0.001 to 0.10.18. The oxide thin film according to 16, the oxide thin film having anatomic ratio “Ga/(Ga+In)” of 0.005 to 0.08.19. The oxide thin film according to any one of 16 to 18, wherein thebixbyite structure has a lattice constant of 10.01 Å or more and lessthan 10.118 Å.20. The oxide thin film according to any one of 16 to 19, whereindispersed gallium aggregates have a diameter of less than 1 μm.21. The oxide thin film according to any one of 16 to 20, furtherincluding one or two or more oxides selected from yttrium oxide,scandium oxide, aluminum oxide, and boron oxide.22. The oxide thin film according to 21, the oxide thin film having acontent of the one or two or more oxides selected from yttrium oxide,scandium oxide, aluminum oxide, and boron oxide, of 0.01 to 5 atom %.23. A thin film transistor including the oxide thin film according toany one of 15 to 22.24. The thin film transistor according to 23, the thin film transistorbeing a channel-etch thin film transistor.25. The thin film transistor according to 23, the thin film transistorbeing an etch-stopper thin film transistor.26. A method of producing a thin film transistor including forming anoxide thin film using the sputtering target according to 14, andcrystallizing the oxide thin film by heating the oxide thin film in anoxygen atmosphere.27. The method according to 26, wherein the oxide thin film is formed ina film forming gas having an oxygen content of 10 vol % or more.28. The method according to 26 or 27, wherein the oxide thin film iscrystallized by heating the oxide thin film at 250 to 500° C. for 0.5 to1200 minutes.29. The method according to any one of 26 to 28, further includingforming an oxide insulator layer on the oxide thin film that has beenheated.30. A semiconductor device including the thin film transistor accordingto any one of 23 to 25.

The invention thus provides a non-silicon-based semiconductor thin filmthat may be used for a thin film transistor, and a sputtering targetused to produce the non-silicon-based semiconductor thin film. Theinvention also thus provides a thin film transistor that includes anovel non-silicon-based semiconductor thin film.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 1.

FIG. 2 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 2.

FIG. 3 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 3.

FIG. 4 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 4.

FIG. 5 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 5.

FIG. 6 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 6.

FIG. 7 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 7.

FIG. 8 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 8.

FIG. 9 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 9.

FIG. 10 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 10.

FIG. 11 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Example 11.

FIG. 12 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Comparative Example 1.

FIG. 13 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Comparative Example 2.

FIG. 14 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Comparative Example 3.

FIG. 15 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Comparative Example 4.

FIG. 16 shows an X-ray diffraction chart of an oxide sintered bodyproduced in Comparative Example 5.

FIG. 17 shows the relationship between the amount of Ga or (Ga+X) addedand the lattice constant of Examples 1 to 11 and Comparative Example 1.

FIG. 18 is a view showing the structure of a channel-etch thin filmtransistor produced in Example 15.

FIG. 19 is a view showing the structure of an etch-stopper thin filmtransistor produced in Examples 16 and 19.

FIG. 20 shows the relationship between the amount of Ga or (Ga+X) addedand the lattice constant of Examples 12 to 18 and Comparative Example 6.

MODE FOR CARRYING OUT THE INVENTION

An oxide sintered body according to one embodiment of the inventionincludes indium oxide and gallium solid-solved therein. The oxidesintered body contains indium and gallium in an amount of 80 atom % ormore based on total metal atoms. The oxide sintered body has an atomicratio “Ga/(In+Ga)” of 0.001 to 0.12. When the atomic ratio “Ga/(In+Ga)”is within this range, gallium is almost completely solid-solved inindium oxide. An element (e.g., gallium) other than indium is preferablyintroduced as an ion at the position of indium included in the crystallattice of indium oxide.

If the atomic ratio “Ga/(In+Ga)” is less than 0.001, the latticeconstant of the indium oxide crystal may change to only a small extent,so that an effect may not be obtained by adding gallium. If the atomicratio “Ga/(In+Ga)” exceeds 0.12, InGaO₃ or the like may precipitate. Theresulting oxide thin film may be crystallized to only a smaller extentwhen more InGaO₃ or the like has precipitated, so that a crystallinethin film may not be obtained.

The atomic ratio “Ga/(In+Ga)” is preferably 0.001 to 0.10, and morepreferably 0.005 to 0.08. The atomic ratio “Ga/(In+Ga)” is still morepreferably 0.01 to 0.05, and particularly preferably 0.02 to 0.04.

The oxide sintered body according to one embodiment of the inventionpreferably has an In₂O₃ bixbyite structure. The oxide sintered body morepreferably has a single-phase In₂O₃ bixbyite structure. In this case,since gallium (Ga) is completely solid-solved and dispersed in the In₂O₃bixbyite structure, an abnormal discharge rarely occurs when using theoxide sintered body as a sputtering target. The bixbyite structurepreferably accounts for 90% or more, more preferably 95% or more, andparticularly preferably 97% or more, of the entire crystal structure.The ratio of crystal structures may be determined by identifying acrystal phase by EPMA analysis, and analyzing an image thereof.

In the oxide sintered body according to one embodiment of the invention,the bixbyite structure preferably has a lattice constant of 10.05 Å ormore and less than 10.118 Å. The bixbyite structure may be determined byX-ray diffraction.

The oxide sintered body according to one embodiment of the inventionpreferably has a density of 6.5 to 7.2 g/cm³. If the oxide sintered bodyhas a low density, the surface of a sputtering target formed of theoxide sintered body may blacken, for example. This may induce anabnormal discharge, so that the sputtering rate may decrease.

The density of the sintered body may be increased by homogenously mixingraw materials having a particle size of 10 μm or less. If the particlesize is too large, a reaction between the indium compound and thegallium compound may not proceed. If the raw materials are nothomogenously mixed, the density of the sintered body may not increasedue to the presence of unreacted particles or abnormally grownparticles.

In the oxide sintered body according to one embodiment of the invention,gallium aggregates dispersed in indium oxide preferably have a diameterof less than 1 μm. The expression “gallium aggregates are dispersed inindium oxide” used herein means that gallium ions are solid-solved inthe indium oxide crystal, or gallium compound particles are finelydispersed in indium oxide particles. A stable sputtering dischargeoccurs when gallium is finely dispersed. The diameter of galliumaggregates may be measured using an electron probe microanalyser (EPMA).

The oxide sintered body according to one embodiment of the inventionpreferably has a bulk resistivity of 10 mΩcm or less. When gallium isnot completely solid-solved (i.e., Ga₂O₃ or the like is observed), anabnormal discharge may occur. The oxide sintered body more preferablyhas a bulk resistivity of 5 mΩcm or less. There is no particular lowerlimit but the oxide sintered body need not have a bulk resistivity ofless than 1 mΩcm.

The oxide sintered body according to one embodiment of the inventionpreferably has a content of metal ions having a positive valence of 4 ormore (e.g., tin, titanium, zirconium, and germanium) of 100 ppm or less.If the content of metal ions having a positive valence of 4 or moreexceeds 100 ppm, the resulting crystalline oxide thin film may exhibitconductivity instead of semiconductivity. The content of metal ionshaving a positive valence of 4 or more is more preferably 50 ppm orless, and still more preferably 30 ppm or less.

The impurity content may be reduced to 100 ppm or less by utilizing araw material having a purity of 99.99% or more.

An indium oxide raw material may include metals having a positivevalence of 4 or more (particularly tin) in an amount of 100 ppm or more.In this case, such metals may produce carriers in the resulting thinfilm, so that it may be impossible to use the thin film as asemiconductor.

The oxide sintered body according to one embodiment of the inventionpreferably has a content of metal ions (e.g., zinc, magnesium, copper,iron, nickel, and cobalt) having a positive valence of 2 or less of 100ppm or less. If the content of metal ions having a positive valence of 2or less is 100 ppm or more, the resulting oxide semiconductor mayexhibit a low mobility.

It is preferable that the content of metal ions having a positivevalence of 4 be equal to or lower than the content of metal ions havinga positive valence of 2.

If the content of metal ions having a positive valence of 4 is higherthan the content of metal ions having a positive valence of 2, theindium oxide crystal may be doped with metal ions having a positivevalence of 4 so that the carrier density may increase. As a result, theresulting oxide thin film may exhibit high conductivity instead ofsemiconductivity. The content of metal ions having a positive valence of2 or less is more preferably 50 ppm or less, and still more preferably30 ppm or less.

The oxide sintered body according to one embodiment of the inventionpreferably further includes one or two or more oxides selected fromyttrium oxide, scandium oxide, aluminum oxide, and boron oxide. Theoxide sintered body preferably has a content of such oxides of 0.01 to 5atom %. If the oxide sintered body includes such oxides, a thin filmobtained using the oxide sintered body as a sputtering target has alattice constant smaller than that of a thin film formed only of indiumoxide (i.e., the intermetallic distance decreases). This increases themobility of a thin film transistor produced using such a thin film.

A method of producing an oxide sintered body according to one embodimentof the invention includes (a) mixing an indium (In) compound powderhaving an average particle size of less than 2 μm with a gallium (Ga)compound powder having an average particle size of less than 2 μm in anatomic ratio “Ga/(In+Ga)” of 0.001 to 0.12 (hereinafter may be referredto as “mixing step”); (h) shaping the resulting mixture to obtain ashaped product (hereinafter may be referred to as “shaping step”); and(c) firing the shaped product at 1200 to 1600° C. for 2 to 96 hours(hereinafter may be referred to as “sintering step”).

The average particle size refers to a value measured in accordance withJIS R 1619.

The indium compound and the gallium compound included in the rawmaterial powders used in the mixing step are either an oxide or acompound (oxide precursor) that becomes an oxide due to firing. Examplesof an indium oxide precursor and a tin oxide precursor include asulfide, a sulfate, a nitrate, a halide (e.g., chloride and bromide), acarbonate, an organic acid salt (e.g., acetate, propionate, andnaphthenate), an alkoxide (e.g., methoxide and ethoxide), an organicmetal complex (e.g., acetylacetonate), and the like of indium or tin.

Among these, a nitrate, an organic acid salt, an alkoxide, or an organicmetal complex is preferable since these compounds are completelypyrolyzed at a low temperature so that impurities do not remain. It isoptimum to use oxides of the respective metals.

The purity of each raw material is normally 99.9 mass % (3N) or more,preferably 99.99 mass % (4N) or more, more preferably 99.995 mass % ormore, and particularly preferably 99.999 mass % (5N) or more. If thepurity of each raw material is 99.9 mass % (3N) or more, a deteriorationin semiconductor properties due to impurities (e.g., metals having apositive valence of 4 or more, Fe, Ni, and Cu) does not occur, so thatsufficient reliability can be achieved. It is particularly preferablethat the content of Na, K, and Ca be 100 ppm or less in order to preventa situation in which the electrical resistance of the resulting thinfilm deteriorates with time.

The raw material powders are preferably mixed by (i) a solution method(coprecipitation method) or (ii) a physical mixing method. It is morepreferable to mix the raw material powders by the physical mixing methodin order to reduce cost.

When using the physical mixing method, the raw material powder includingthe indium compound and the raw material powder including the galliumcompound are put in a mixer (e.g., ball mill, jet mill, pearl mill, orbead mill), and uniformly mixed.

The raw material powders are preferably mixed for 1 to 200 hours. If themixing time is less than 1 hour, the elements may not be uniformlydispersed. If the mixing time exceeds 200 hours, the productivity maydecrease. The mixing time is particularly preferably 10 to 60 hours.

It is preferable that a raw material powder mixture obtained by mixingthe raw material powders have an average particle size of 0.01 to 1.0μm. If the average particle size of the raw material powder mixture isless than 0.01 μm, the powders may aggregate (i.e., the handlingcapability may deteriorate). Moreover, a dense sintered body may not beobtained. If the average particle size of the raw material powdermixture exceeds 1.0 μm, a dense sintered body may not be obtained.

The method may include prefiring the mixture obtained by mixing the rawmaterial powders.

The density of the resulting sputtering target can be easily increasedby prefiring the mixture.

In the prefiring step, the mixture obtained by the step (a) ispreferably heated at 200 to 1000° C. for 1 to 100 hours (more preferably2 to 50 hours). The raw material compounds are sufficiently pyrolyzed byheating the mixture at 200° C. or more for 1 hour or more. A situationin which the particles become rough and large is prevented by heatingthe mixture at 1000° C. or less for 100 hours or less.

It is preferable to grind the prefired mixture before the shaping stepand the sintering step. The prefired mixture is preferably ground usinga ball mill, a roll mill, a pearl mill, a jet mill, or the like. Theground mixture after prefiring preferably has an average particle sizeof 0.01 to 3.0 μm, and more preferably 0.1 to 2.0 μm, for example. Ifthe ground mixture after prefiring has an average particle size of 0.01μm or more, the mixture has a sufficient bulk specific gravity, and canbe easily handled. If the ground mixture after prefiring has an averageparticle size of 3.0 μm or less, the density of the resulting sputteringtarget can be easily increased. The average particle size of the rawmaterial powder may be measured in accordance with JIS R 1619.

The raw material powder mixture may be shaped by pressing, coldisostatic pressing, or the like.

When shaping the raw material powder mixture by pressing, a coldpressing method, a hot pressing method, or the like may be employed. Forexample, a die is filled with the powder mixture, and the powder mixtureis pressed using a cold press machine. The powder mixture is pressed atroom temperature (25° C.) under a pressure of 100 to 100,000 kg/cm², forexample.

The resulting raw material powder shaped product is then fired toproduce an oxide sintered body.

The sintering temperature is 1200 to 1600° C., preferably 1250 to 1580°C., and particularly preferably 1300 to 1550° C.

If the sintering temperature is within the above range, gallium iseasily solid-solved in indium oxide, so that the bulk resistivity of theresulting oxide sintered body can be reduced.

If the sintering temperature is 1600° C. or less, evaporation of galliumcan be suppressed.

The sintering time is preferably 2 to 96 hours, and more preferably 10to 72 hours.

If the sintering time is 2 hours or more, the sintered density of theresulting oxide sintered body can be improved, so that the surface ofthe oxide sintered body can be processed. If the sintering time is 96hours or less, the formed product can be appropriately sintered.

The shaped product is preferably sintered in an oxygen gas atmosphere.The density of the resulting oxide sintered body can be increased bysintering the shaped product in an oxygen gas atmosphere, so that anabnormal discharge during sputtering of the oxide sintered body can besuppressed. The oxygen gas atmosphere preferably has an oxygenconcentration of 10 to 100 vol %, for example. Note that the shapedproduct may be sintered in a non-oxidizing atmosphere (e.g., undervacuum or in a nitrogen atmosphere).

The formed product may be sintered under atmospheric pressure or anincreased pressure. The pressure is 9800 to 1,000,000 Pa, and preferably100,000 to 500,000 Pa, for example.

The oxide sintered body according to one embodiment of the invention maybe produced by the above method. The oxide sintered body according toone embodiment of the invention may be used as a sputtering target.Since the oxide sintered body according to one embodiment of theinvention has high conductivity, a DC sputtering method that achieves ahigh deposition rate can be applied when using the oxide sintered bodyas a sputtering target.

An arbitrary sputtering method (e.g., RF sputtering method, ACsputtering method, pulsed DC sputtering method) may be applied to thesputtering target according to one embodiment of the invention inaddition to the DC sputtering method without causing an abnormaldischarge.

An oxide thin film may be produced by vapor deposition, sputtering, ionplating, pulsed laser deposition, or the like using the above oxidesintered body. Examples of the sputtering method include an RF magnetronsputtering method, a DC magnetron sputtering method, an AC magnetronsputtering method, a pulsed DC magnetron sputtering method, and thelike.

A mixed gas of argon and an oxidizing gas may be used as a sputteringgas. Examples of the oxidizing gas include O₂, CO₂, O₃, H₂O, and thelike. It is preferable to adjust the partial pressure of oxygen duringsputtering to 0.1 to 20%. If the partial pressure of oxygen is less than0.1%, a transparent amorphous film immediately after film formation mayhave conductivity, and may not be able to be used as an oxidesemiconductor. If the partial pressure of oxygen exceeds 20%, theresulting transparent amorphous film may have insulating properties, andmay not be able to be used as an oxide semiconductor. The partialpressure of oxygen is more preferably 1 to 10%.

An oxide thin film according to one embodiment of the invention includesindium oxide and gallium solid-solved therein, and contains gallium andindium in an amount of 80 atom % or more based on total metal atoms. Theoxide thin film has an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12. Theoxide thin film preferably has an atomic ratio “Ga/(Ga+In)” of 0.001 to0.10, and particularly preferably 0.005 to 0.08.

Gallium oxide reduces the lattice constant (i.e., increases themobility) of indium oxide. Gallium oxide has a high ability to bond tooxygen, and reduces oxygen deficiency of a polycrystallized indium oxidethin film. Gallium oxide has a site that is completely solid-solved inindium oxide, and completely integrated with crystallized indium oxideto reduce the lattice constant of indium oxide. When gallium oxide isadded in an amount that exceeds the solid-solubility limit, precipitatedgallium oxide may cause electron scattering, or may hindercrystallization of indium oxide.

The oxide thin film according to one embodiment of the invention has asingle-phase bixbyite structure, and the bixbyite structure preferablyhas a lattice constant of 10.01 Å or more and less than 10.118 Å (notethat the lower limit of the lattice constant is not particularlylimited). A small lattice constant means that the crystal lattice isreduced, and the intermetallic distance is short. The moving speed ofelectrons along the orbital of the metal increases due to a decrease inintermetallic distance, so that the mobility of the resulting thin filmtransistor increases. If the lattice constant is too large (i.e., isalmost equal to that of the crystal lattice of indium oxide), themobility is not improved.

In the oxide thin film according to one embodiment of the invention,gallium aggregates dispersed in indium oxide preferably have a diameterof less than 1 μm.

The oxide thin film according to one embodiment of the inventionpreferably further includes one or two or more oxides selected fromyttrium oxide, scandium oxide, aluminum oxide, and boron oxide. The 3Ooxide thin film preferably has a content of such oxides of 0.01 to 5atom %. These oxides have a site that is completely solid-solved inindium oxide in the same manner as gallium oxide, and completelyintegrated with crystallized indium oxide to reduce the lattice constantof indium oxide. The degree of 5s orbital overlap of indium in thecrystal increases due to a decrease in lattice constant, so that themobility is expected to be improved.

The oxide thin film according to one embodiment of the invention may beproduced using the sputtering target according to one embodiment of theinvention.

A sputtering target having a low gallium concentration is used whenforming a crystalline film since a film having a low galliumconcentration is easily crystallized. A sputtering target having a highgallium concentration is used when forming a non-crystalline film sincea film having a high gallium concentration tends to becomenon-crystalline. Specifically, an amorphous film and a crystalline filmcan be formed when the Ga ratio is about 0.05 to 0.12, and a crystallinefilm is formed when the Ga ratio is about 0.05 or less. These thin filmsare formed by almost the same method.

A crystalline film is obtained when using a sputtering target having anatomic ratio “Ga/(In+Ga)” of less than 0.05 (i.e., low galliumconcentration).

Note that an amorphous film may be formed as follows using a sputteringtarget having an atomic ratio “Ga/(In+Ga)” of less than 0.05 in order toimprove uniformity of the thin film. For example, an amorphous film maybe formed by adjusting the sputtering conditions, such as setting thesubstrate temperature to a temperature equal to or lower than roomtemperature, adding steam to the sputtering gas at 0.1 Pa or less, orsetting the sputtering gas pressure to 5 Pa or more. A crystalline filmmay be obtained by subjecting the amorphous film to an additionalheating step described later.

When forming a crystalline film using a sputtering target having anatomic ratio “Ga/(In+Ga)” of 0.05 or more and less than 0.12 (i.e., highgallium concentration), the substrate temperature during film formationis preferably set within the range from room temperature to 450° C.Specifically, cost increases when cooling the substrate to a temperaturelower than room temperature, and the apparatus cost increases whenheating the substrate to a temperature higher than 450° C. The substratetemperature during film formation is more preferably set within therange from room temperature (i.e., the substrate is not heated) to 200°C. When continuously performing the sputtering process, the substratemay be heated due to plasma during sputtering. In this case, it ispreferable to cool the substrate to about room temperature duringsputtering when using a film substrate or the like.

When the substrate is not heated during film formation, it is necessaryto perform the additional heating step to effect crystallization. Notethat the additional heating step may also be performed when heating thesubstrate during film formation.

When the substrate or the like on which the oxide thin film is formed isheated to 150 to 450° C., the thin film is crystallized, and exhibitssemiconductor properties. If the heating temperature is lower than 150°C., the thin film may not be sufficiently crystallized. As a result, theinsulating properties of the thin film may be impaired, so that leakagemay occur. If the heating temperature is 450° C. or higher, thesubstrate may warp, or the thin film layers may be removed from eachother when fabricating a semiconductor device. The heating temperatureis more preferably 200 to 350° C., and still more preferably 240 to 300°C.

The heating time is preferably 0.5 to 120 minutes. The oxide thin filmis sufficiently crystallized by high-power heating (e.g., laser heating)within about 0.5 minutes. If the heating time is less than 0.5 minutes,the oxide thin film may not be sufficiently crystallized. If the heatingtime exceeds 120 minutes, cost may increase. The heating time is morepreferably 0.5 to 90 minutes, and still more preferably 1 to 60 minutes.

The heating atmosphere is not particularly limited, but is preferablyair, an oxygen atmosphere, a nitrogen atmosphere, or a low-vacuumatmosphere. Among these, air and an oxygen atmosphere are morepreferable due to ease of carrier control. It is conjectured thatexcessive oxygen and water in a crystalline oxide semiconductor thinfilm are exchanged for oxygen in the atmosphere. Therefore, anoxygen-containing atmosphere is preferable in order to stabilize thesemiconductor properties. Note that oxygen deficiency may completelydisappear when heating the oxide thin film at a high temperature in pureoxygen, so that an insulator may be obtained. The oxygen concentrationis preferably 19 to 50%.

The oxide thin film according to one embodiment of the invention may beused for a thin film transistor. In particular, the oxide thin film maybe used as a channel layer. The oxide thin film may be used eitherdirectly or after heating.

A thin film transistor according to one embodiment of the invention maybe a channel-etch thin film transistor. The thin film according to oneembodiment of the invention is crystalline, and has durability.Therefore, when producing a thin film transistor using the thin filmaccording to one embodiment of the invention, it is possible to employ aphotolithographic process that forms source/drain electrodes and achannel region by etching a metal (e.g., AI) thin film.

The thin film transistor according to one embodiment of the inventionmay be an etch-stopper thin film transistor. In this case, since achannel region formed of the semiconductor layer (i.e., the thin filmaccording to one embodiment of the invention) can be protected by anetch stopper, and a large amount of oxygen can be introduced into thesemiconductor film during film formation, it is unnecessary toexternally supply oxygen through the etch stopper layer. Since the thinfilm is an amorphous film immediately after film formation, thesource/drain electrodes and the channel region can be formed by etchinga metal (e.g., Al) thin film while etching the semiconductor layer, sothat the time required for the photolithographic process can be reduced.

A method of producing a thin film transistor according to one embodimentof the invention includes forming an oxide thin film using thesputtering target according to one embodiment of the invention, heatingthe oxide thin film in an oxygen atmosphere, and forming an oxideinsulator layer on the oxide thin film that has been heated. The oxidethin film is crystallized by heating the oxide thin film.

The oxide insulator layer is preferably formed on the oxide thin filmthat has been heated in order to prevent deterioration in semiconductorproperties with time.

The oxide thin film is preferably deposited using a film forming gashaving an oxygen content of 10 vol % or more. A mixed gas of argon andoxygen is used as the film forming gas, for example.

The subsequent crystallization can be stabilized by adjusting the oxygencontent in the film forming gas to 10 vol % or more. If the oxygencontent in the sputtering gas is less than 10 vol %, it is necessary toexternally supply oxygen required for crystallization, so that oxygendeficiency in the semiconductor may completely disappear. In the casewhere such a deficiency, the crystal may not be grown normally, and mayinclude a scattering factor, so that a decrease in mobility may occur.

The upper limit of the oxygen content in the film forming gas is notparticularly limited. However, the sputtering rate may decrease when theoxygen content in the film forming gas is 100 vol %. Therefore, theoxygen content in the film forming gas is preferably adjusted to 50 vol% or less. The oxygen content in the film forming gas is more preferably40 vol % or less, and still more preferably 30 vol % or less. A largeamount of excessive oxygen introduced into the semiconductor is easilydischarged to the outside during the subsequent crystallization step, sothat an indium oxide crystal thin film with a small number of latticedeficiencies can be obtained.

The oxide thin film may be crystallized in the presence or absence ofoxygen using a lamp annealing apparatus, a laser annealing apparatus, athermal plasma apparatus, a hot-blast heating apparatus, a contactheating apparatus, or the like. In this case, it is preferable to employa high temperature rise rate. If the temperature rise rate is low, thecrystal particles may be abnormally grown. As a result, lattice shearmay increase at the interface between the particles, and may causescattering. It is possible to produce small crystal particles and reducelattice shear by crystallizing the oxide thin film within a short time,so that the effect of improving the mobility is enhanced. Lattice shearmay be considered to be a mismatch in crystal orientation at theinterface between crystals that differ in crystal orientation.Scattering occurs to only a small extent when the crystal particles havesimilar crystal orientations.

The temperature rise rate is normally 40° C./min or more, preferably 70°C./min or more, more preferably 80° C./min or more, and still morepreferably 100° C./min or more. The upper limit of the temperature riserate is not particularly limited. When subjecting the oxide thin film tolaser heating or thermal plasma heating, the temperature of the oxidethin film can be instantaneously increased to the desired heatingtemperature.

It is also preferable to employ a high cooling rate. However, if thecooling rate is too high, the substrate may break, or the electricalproperties of the thin film may deteriorate due to residual internalstress. If the cooling rate is too low, the crystal may be abnormallygrown due to an annealing effect. It is preferable to set the coolingrate in the same manner as the temperature rise rate (heating rate). Thecooling rate is normally 5 to 300° C./min, preferably 10 to 200° C./min,and more preferably 20 to 100° C./min.

The oxide thin film is preferably heated at 250 to 500° C. for 0.5 to1200 minutes. If the heating temperature is lower than 250° C., theoxide thin film may not be crystallized. If the heating temperatureexceeds 500° C., the substrate and the semiconductor film may bedamaged. If the heating time is less than 0.5 minutes, the oxide thinfilm may not be crystallized because of too short heating time. It maytake time to crystallize the oxide thin film when the heating timeexceeds 1200 minutes.

EXAMPLES

The invention is further described below by way of examples andcomparative examples. Note that the invention is not limited to thefollowing examples. The invention also includes various modificationsand other examples that are based on the technical concept of theinvention.

Examples 1 to 8 Production of Oxide Sintered Body

The following oxide powders were used as the raw material powders. Theaverage particle size of the raw material powder was measured using alaser diffraction particle size distribution analyzer “SALD-300V”(manufactured by Shimadzu Corporation), and the specific surface area ofthe raw material powder was measured by the BET method.

(a) Indium oxide powder (specific surface area: 6 m²/g, average particlesize: 1.2 μm)(b) Gallium oxide powder (specific surface area: 6 m²/g, averageparticle size: 1.5 μm) The raw material powder mixture of the powders(a) and (b) had a specific surface area of 6.0 m²/g.

The above powders were weighed in a Ga/(In+Ga) ratio shown in Table 1,and mixed and ground using a wet stirred media mill. Zirconia beadshaving a diameter of 1 mm were used as the media. The specific surfacearea of the raw material powder mixture was increased by 2 m²/g bygrinding while checking the specific surface area of the raw materialpowder mixture.

The ground powder mixture was dried using a spray dryer, put in a die(diameter: 150 mm, thickness: 20 mm), and pressed using a cold pressmachine. The shaped product was sintered in an oxygen atmosphere (inwhich oxygen was circulated) at a temperature shown in Table 1 for 24hours to obtain a sintered body.

The density of the sintered body was calculated from the weight and theexternal dimensions of the sintered body which had been cut to a givensize. A sputtering target sintered body having a high density was thusobtained without performing a prefiring step.

The bulk resistivity (conductivity) (mΩcm) of the sintered body wasmeasured by a four-probe method using a resistance meter (“Loresta”manufactured by Mitsubishi Chemical Corporation).

The impurity concentration in the sintered body was determined asfollows. Specifically, the sintered body was sampled, dissolved inwater, and quantitatively analyzed by inductively coupled plasma (ICP)emission spectroscopy to determine the impurity concentration in thesintered body.

The evaluation results are shown in Table 1.

The sintered body was subjected to X-ray diffraction analysis. FIGS. 1to 8 respectively show X-ray diffraction charts of Examples 1 to 8.

As a result of analyzing the X-ray diffraction charts, an In₂O₃ bixbyitestructure was observed in the sintered bodies of Examples 1 to 8.

The lattice constants of the sintered bodies of Examples 1 to 8 werecalculated from the X-ray diffraction analysis results. Table 1 showsthe lattice constants of the sintered bodies of Examples 1 to 8 (latticeconstant of cubic crystal of In₂O₃: 11.118 Å).

The X-ray diffraction (XRD) measurement conditions were as follows.

Apparatus: “Ultima-III” manufactured by Rigaku CorporationX-rays: Cu-Kα radiation (wavelength: 1.5406 Å, monochrornatized using agraphite monochromator)Output: 50 kV-120 mA2θ-θ reflection method, continuous scan (1.0°/min)Sampling interval: 0.02°

Slit DS, SS: 2/3°, RS: 0.6 mm

The peak was separated, and the peak intensity was calculated from thearea of the peak.

Dispersion of gallium was determined by the EPMA measurement of thesintered body. A gallium aggregate having a diameter of 1 μm or more wasnot observed.

The sintered body was cut, and bonded to a backing plate to obtain asputtering target having a diameter of 4 inches. The sputtering targetwas installed in a DC sputtering apparatus, and a sputtering process wascontinuously performed using argon as a sputtering gas (0.3 Pa, DCoutput: 400 (10 kWhr). A change in voltage during sputtering wasrecorded (stored) in a data logger to determine the occurrence of anabnormal discharge. The occurrence of an abnormal discharge wasdetermined by detecting an abnormal discharge by monitoring a change involtage. The results are shown in Table 1. When a change in voltage thatoccurred within 5 minutes during the measurement was equal to or morethan 10% of the constant voltage during sputtering, it was determinedthat an abnormal discharge occurred.

A micro-arc refers to an abnormal sputtering discharge that is detectedwhen the sputtering voltage has changed ±10% within 0.1 seconds. Thedevice yield may decrease due to a micro-arc, and it may be difficult toimplement mass production.

Examples 9 to 11 Production of Oxide Sintered Body

The following oxide powders were used as the raw material powders. Theaverage particle size of the raw material powder was measured using alaser diffraction particle size distribution analyzer “SALD-300V”(manufactured by Shimadzu Corporation), and the specific surface area ofthe raw material powder was measured by the BET method.

(a) Indium oxide powder (specific surface area: 6 m²/g, average particlesize: 1.2 μm)(b) Gallium oxide powder (specific surface area: 6 m²/g, averageparticle size: 1.5 μm)(c) Scandium oxide (specific surface area: 6 m²/g, average particlesize: 1.5 μm)(d) Yttrium oxide (specific surface area: 6 m²/g, average particle size:1.5 μm)(e) Aluminum oxide (specific surface area: 6 m²/g, average particlesize: 1.5 μm)The powders (a), (b), and (c), (d), or (e) were weighed in a Ga/(In+Ga)ratio and an X/(In+Ga+X) ratio (X is an additive element) shown in Table2, and mixed to obtain a raw material powder mixture. The raw materialpowder mixture had a specific surface area of 6.0 m²/g.

A sintered body was produced and evaluated in the same manner as inExample 1, except for using the above raw material powder mixture, andsintering the shaped product at a temperature shown in Table 2. Theresults are shown in Table 2.

The sintered body was subjected to X-ray diffraction analysis in thesame manner as in Example 1.

FIGS. 9 to 11 respectively show X-ray diffraction charts of Examples 9to 11.

As a result of analyzing the X-ray diffraction charts, an In₂O₃ bixbyitestructure was observed in the sintered bodies of Examples 9 to 11.

Table 2 shows the lattice constants of the sintered bodies of Examples 9to 11 determined by X-ray diffraction analysis (lattice constant ofcubic crystal of In₂O₃: 10.118 Å).

Comparative Examples 1 to 4 Production of Oxide Sintered Body

A sintered body was produced and evaluated in the same manner as inExample 1, except for mixing the raw material powders in a Ga/(In+Ga)ratio shown in Table 3, and sintering the shaped product at atemperature shown in Table 3. The results are shown in Table 3.

FIGS. 12 to 15 respectively show X-ray diffraction charts of ComparativeExamples 1 to 4. As a result of analyzing the X-ray diffraction charts,an In₂O₃ phase and an InGaO₃ or Ga₂O₃ phase were observed in thesintered bodies of Comparative Examples 1 to 4.

Comparative Example 5 Production of Oxide Sintered Body

A sintered body was produced and evaluated in the same manner as inExample 1, except for mixing the raw material powders in a Ga/(In+Ga)ratio shown in Table 1, and sintering the shaped product at atemperature shown in Table 1. The results are shown in Table 1.

FIG. 16 shows an X-ray diffraction chart of Comparative Example 5. Themain peak intensity ratio of an InGaO₃ phase to an In₂O₃ phase in theX-ray diffraction chart was 1.2.

TABLE 1 Impurity concentration (ppm) Ions having Ions having AbnormalSintering Lattice positive positive Density Conductivity discharge Ga/temperature constant valence of valence of of target of target duringExample (Ga + In) ° C. Å 4 or more 2 or less g/cm³ mΩcm sputtering 10.02 1350 10.09188 24 30 6.65 4.5 Did not occur 2 0.02 1400 10.09976 2632 6.67 2.8 Did not occur 3 0.04 1400 10.06859 22 28 6.68 3.4 Did notoccur 4 0.029 1200 10.09602 24 28 6.55 4.9 Did not occur 5 0.029 140010.09672 26 25 6.82 3.8 Did not occur 6 0.029 1600 10.09458 24 28 6.723.2 Did not occur 7 0.072 1400 10.06435 22 28 6.65 4.1 Did not occur 80.072 1600 10.0694 24 30 6.96 2.4 Did not occur

TABLE 2 Impurity concentration (ppm) Additive Ions having Ions havingAbnormal element Sintering Lattice positive positive DensityConductivity discharge Ga/ X/(Ga + temperature constant valence ofvalence of of target of target during Example (Ga + In) In + X) ° C. Å 4or more 2 or less g/cm³ mΩcm sputtering 9 0.072 X = Sc 1450 10.05432 2430 6.65 4.5 Did not 0.019 occur 10 0.072 X = Y 1400 10.09976 26 32 6.672.8 Did not 0.012 occur 11 0.072 X = Al 1400 10.06859 22 28 6.68 3.4 Didnot 0.026 occur

TABLE 3 Impurity concentration (ppm) Ions having Ions having AbnormalSintering Lattice positive positive Density Conductivity dischargeComparative Ga/ temperature constant valence of valence of of target oftarget during Example (Ga + In) ° C. Å 4 or more 2 or less g/cm³ mΩcmsputtering 1 0.0 1400 10.1184 42 34 6.45 15.2 Occurred: Surfaceblackened 2 0.14 1400 InGaO₃ phase 38 24 6.81 18.1 Micro-arc wasobserved occurred 3 0.27 1400 InGaO₃ phase 36 28 6.38 25.3 Micro-arc wasobserved occurred 4 0.27 1600 InGaO₃ phase 38 24 6.91 14.8 Micro-arc wasobserved occurred 5 0.4 1400 InGaO₃ phase 25 20 5.94 3800 Occurred: wasobserved Surface blackened

FIG. 17 shows the amount of Ga or (Ga+X) added and the lattice constantdistribution of Examples 1 to 11 and Comparative Example 1. In FIG. 17,the symbol “E” indicates “Example”, and the symbol “C” indicates“Comparative Example”. As shown in FIG. 17, the sintered bodies ofExamples 1 to 11 had a small lattice constant.

Example 12 Production of Thin Film Transistor

A semiconductor film (thickness: 50 nm) was formed by sputtering on aconductive silicon substrate (provided with a thermally oxidized film(SiO₂ film) (thickness: 100 nm)) and a quartz glass substrate using theindium oxide (97 atom % (metal content))-gallium oxide (3 atom % (metalcontent)) target (Ga/(In+Ga)=0.03) obtained in Example 4. Specifically,the atmosphere was evacuated until the back pressure became 5×10⁻⁴ Pa,and the sputtering process was performed at room temperature at apressure of 0.2 Pa and a sputtering power of 100 W while introducingargon (8.5 sccm) and oxygen (1.5 sccm).

A channel region (length: 200 μm, width: 1000 μm) was formed on theconductive silicon substrate (on which the thin film was formed) via ametal mask, and source/drain electrodes were formed by depositing gold.

The conductive silicon substrate was heated in a heating furnace at 350°C. for 30 minutes in air.

An SiO₂ film was then formed on the conductive silicon substrate (thinfilm) by plasma CVD.

A normally-off thin film transistor having a field-effect mobility of91.4 cm²V·sec and an on-off ratio of 4.5×10⁷ was thus obtained. The thinfilm transistor had clear pinch-off output characteristics. The S valuewas 0.45. A sift in threshold voltage (Vth) after applying a voltage of20 V to the gate for 100 minutes was 0.2 V or less.

The quartz glass substrate on which the thin film was formed was heatedin a hot-blast heating furnace at 350° C. for 30 minutes in air. As aresult of XRD analysis of the thin film, a peak indicating asingle-phase indium oxide bixbyite structure was observed. The quartzglass substrate was heated at 450° C. for 5 hours in air, and the thinfilm was subjected to XRD analysis. The peak intensity obtained afterheating the quartz glass substrate at 350° C. was almost equal to thatobtained after heating the quartz glass substrate at 450° C. (i.e., asingle-phase bixbyite structure was observed). The lattice constant ofthe crystalline indium oxide thin film was 10.10285 Å.

The carrier concentration of the thin film determined by Hall effectmeasurement was 1.4×10¹⁸/cm⁻³.

Example 13 Production of thin film transistor

A thin film transistor was produced, and the characteristics thereofwere evaluated in the same manner as in Example 12, except for using theindium oxide (92.8 atom % (metal content))-gallium oxide (7.2 atom %(metal content)) target (Ga/(In+Ga)=0.072) obtained in Example 7.

A normally-off thin film transistor having a field-effect mobility of123.7 cm²/V·sec and an on-off ratio of 4.7×10⁸ was thus obtained. Thethin film transistor had clear pinch-off output characteristics. The Svalue was 0.5. A sift in threshold voltage (Vth) after applying avoltage of 20 V to the gate for 100 minutes was 0.2 V or less.

A thin film formed on a quartz glass substrate was heated, and evaluatedin the same manner as in Example 12. As a result of XRD analysis of thethin film, a peak indicating an indium oxide bixbyite structure wasobserved. The peak intensity obtained after heating the quartz glasssubstrate at 350° C. was almost equal to that obtained after heating thequartz glass substrate at 450° C. (i.e., a single-phase bixbyitestructure was observed). The lattice constant of the thin film was10.04692 Å.

The carrier concentration of the thin film determined by Hall effectmeasurement was 1.2×10¹⁸/cm⁻³.

Example 14 Production of Thin Film Transistor

A thin film transistor was produced, and the characteristics thereofwere evaluated in the same manner as in Example 12, except for using anindium oxide (88.6 atom % (metal contentt))-gallium oxide (11.4 atom %(metal content)) target (Ga/(In+Ga)=0.114) obtained in the same manneras in Example 1 (i.e., the composition was changed).

A normally-off thin film transistor having a field-effect mobility of64.5 cm²/V·sec and an on-off ratio of 4.2×10⁹ was thus obtained. Thethin film transistor had clear pinch-off output characteristics. The Svalue was 0.45. A sift in threshold voltage (Vth) after applying avoltage of 20 V to the gate for 100 minutes was 0.2 V or less.

A thin film formed on a quartz glass substrate was heated, and evaluatedin the same manner as in Example 12. As a result of XRD analysis of thethin film, a peak indicating an indium oxide bixbyite structure wasobserved. The peak intensity obtained after heating the quartz glasssubstrate at 350° C. was almost equal to that obtained after heating thequartz glass substrate at 450° C. (i.e., a single-phase bixbyitestructure was observed). The lattice constant of the thin film was10.01289 Å, and the carrier concentration was 1.5×10¹⁸/cm⁻³.

Example 15 Production of Thin Film Transistor

A semiconductor film was formed on a conductive silicon substrate(provided with a thermally oxidized film (SiO₂ film) (thickness: 100nm)) and a quartz substrate at room temperature in the same manner as inExample 12, except for using the indium oxide (98 atom % (metalcontent))-gallium oxide (2 atom % (metal content)) target((Ga/(In+Ga)=0.02) obtained in Example 1.

The conductive silicon substrate was heated in a hot-blast heatingfurnace at 300° C. for 30 minutes in air.

Molybdenum metal was then deposited on the conductive silicon substrateto a thickness of 300 nm.

A resist was then applied to the conductive silicon substrate, pre-bakedat 80° C. for 15 minutes, exposed to UV light (intensity: 300 mJ/cm²)via a mask, developed using 3 wt % tetramethylammonium hydroxide, washedwith purified water, and post-baked at 130° C. for 15 minutes to form aresist pattern having the desired source/drain electrode shape.

The molybdenum metal deposited on the substrate provided with the resistpattern was etched using a mixed acid of phosphoric acid, acetic acid,and nitric acid, washed with purified water, and dried by blowing air.The characteristics of the resulting channel-etch thin film transistorwere evaluated. FIG. 18 shows the structure of the channel-etch thinfilm transistor obtained in Example 15. In FIG. 18, reference numeral 10indicates a conductive silicon substrate, reference numeral 20 indicatesa conductive silicon member, and reference numeral 30 indicates athermally oxidized film (SiO₂ film). The conductive silicon member 20functions as a gate electrode, and the thermally oxidized film 30functions as a gate insulating film. Reference numeral 40 indicates asemiconductor film formed using the target, reference numerals 50 and 52indicate a source electrode and a drain electrode formed of molybdenummetal, and reference numeral 60 indicates a channel region.

A normally-off thin film transistor having a field-effect mobility of60.2 cm²/V·sec and an on-off ratio of 4.5×10⁶ was thus obtained. Thethin film transistor had clear pinch-off output characteristics. The Svalue was 0.9. A sift in threshold voltage (Vth) after applying avoltage of 20 V to the gate for 100 minutes was 0.2 V or less.

The thin film formed on the quartz glass substrate was heated, andevaluated in the same manner as in Example 12. As a result of XRDanalysis of the thin film, a peak indicating an indium oxide bixbyitestructure was observed. The peak intensity obtained after heating thequartz glass substrate at 350° C. was almost equal to that obtainedafter heating the quartz glass substrate at 450° C. (i.e., asingle-phase bixbyite structure was observed). The lattice constant ofthe thin film was 10.10628 Å, and the carrier concentration was1.5×10¹⁸/cm⁻³.

Example 16 Production of Thin Film Transistor

A semiconductor film was formed on a conductive silicon substrate(provided with a thermally oxidized film (SiO₂ film) (thickness: 100nm)) and a quartz substrate at room temperature in the same manner as inExample 12, except for using the indium oxide (93 atom % (metalcontent))-gallium oxide (5 atom % (metal content))-scandium oxide (2atom % (metal content)) target (Ga/(In+Ga)=0.051, Sc/(In+Ga+Sc)=0.02)obtained in the same manner as in Example 9.

An etch stopper (aluminum oxide) was then formed on the conductivesilicon substrate (on which the oxide thin film was formed) via a metalmask. After removing the metal mask, molybdenum metal was deposited overthe entire surface of the conductive silicon substrate to a thickness of300 nm.

A resist was then applied to the conductive silicon substrate, pre-bakedat 80° C. for 15 minutes, exposed to UV light (intensity: 300 mJ/cm²)via a mask, developed using 3 wt % tetramethylammonium hydroxide, washedwith purified water, and post-baked at 130° C. for 15 minutes to form aresist pattern having the desired source/drain electrode shape.

The molybdenum metal and the oxide thin film on the substrate providedwith the resist pattern were etched using a mixed acid of phosphoricacid, acetic acid, and nitric acid, washed with purified water, anddried by blowing air. The substrate was then heated in a hot-blastheating furnace at 350° C. for 30 minutes in air. The characteristics ofthe resulting etch-stopper thin film transistor were evaluated. FIG. 19shows the structure of the etch-stopper thin film transistor obtained inExample 16. In FIG. 19, reference numeral 10 indicates a conductivesilicon substrate, reference numeral 20 indicates a conductive siliconmember, and reference numeral 30 indicates a thermally oxidized film(SiO₂ film). The conductive silicon member 20 functions as a gateelectrode, and the thermal oxide film 30 functions as a gate insulatingfilm. Reference numeral 40 indicates a semiconductor film formed usingthe target, and reference numerals 50 and 52 indicate a source electrodeand a drain electrode formed of molybdenum metal. Reference numeral 60indicates a channel region, and reference numeral 70 indicates an etchstopper.

A normally-off thin film transistor having a field-effect mobility of42.5 cm²/V·sec and an on-off ratio of 9.5×10⁷ was thus obtained. Thethin film transistor had clear pinch-off output characteristics. The Svalue was 0.8. A sift in threshold voltage (Vth) after applying avoltage of 20 V to the gate for 100 minutes was 0.2 V or less.

The thin film formed on the quartz glass substrate was heated, andevaluated in the same manner as in Example 12. As a result of XRDanalysis of the thin film, a peak indicating an indium oxide bixbyitestructure was observed. The peak intensity obtained after heating thequartz glass substrate at 350° C. was almost equal to that obtainedafter heating the quartz glass substrate at 450° C. (i.e., asingle-phase bixbyite structure was observed). The lattice constant ofthe thin film was 10.0624 Å, and the carrier concentration was2.1×10¹⁸/cm⁻³.

Example 17 Production of Thin Film Transistor

A thin film transistor was produced, and the characteristics thereofwere evaluated in the same manner as in Example 12, except for using anindium oxide (90.9 atom % (metal content))-gallium oxide (7.2 atom %(metal content))-aluminum oxide (1.9 atom % (metal content)) target(Ga/(In+Ga)=0.073, Al/(In+Ga+Al)=0.019)) obtained in the same manner asin Example 11.

A normally-off thin film transistor having a field-effect mobility of46.5 cm²/V·sec and an on-off ratio of 4.4×10⁷ was thus obtained. Thethin film transistor had clear pinch-off output characteristics. The Svalue was 0.7. A sift in threshold voltage (Vth) after applying avoltage of 20 V to the gate for 100 minutes was 0.2 V or less.

The thin film formed on the quartz glass substrate was heated, andevaluated in the same manner as in Example 12. As a result of XRDanalysis of the thin film, a peak indicating an indium oxide bixbyitestructure was observed. The peak intensity obtained after heating thequartz glass substrate at 350° C. was almost equal to that obtainedafter heating the quartz glass substrate at 450° C. (i.e., asingle-phase bixbyite structure was observed). The lattice constant ofthe thin film was 10.04992 Å, and the carrier concentration was2.0×10¹⁸/cm⁻³.

Example 18 Production of Thin Film Transistor

A thin film transistor was produced, and the characteristics thereofwere evaluated in the same manner as in Example 12, except for using anindium oxide (95.1 atom % (metal content))-gallium oxide (4 atom %(metal content))-boron oxide (0.9 atom % (metal content)) target(Ga/(In+Ga)=0.040, B/(In+Ga+B)=0.009)) obtained in the same manner as inExample 9.

A normally-off thin film transistor having a field-effect mobility of49.7 cm²/V·sec and an on-off ratio of 9.96×10⁷ was thus obtained. Thethin film transistor had clear pinch-off output characteristics. The Svalue was 0.45. A sift in threshold voltage (Vth) after applying avoltage of 20 V to the gate for 100 minutes was 0.2 V or less.

The thin film formed on the quartz glass substrate was heated, andevaluated in the same manner as in Example 12. As a result of XRDanalysis of the thin film, a peak indicating an indium oxide bixbyitestructure was observed. The peak intensity obtained after heating thequartz glass substrate at 350° C. was almost equal to that obtainedafter heating the quartz glass substrate at 450° C. (i.e., asingle-phase bixbyite structure was observed). The lattice constant ofthe thin film was 10.08936 Å, and the carrier concentration was2.4×10¹⁸1 cm⁻³.

Example 19 Production of Thin Film Transistor

A semiconductor film was formed on a conductive silicon substrate(provided with a thermally oxidized film (SiO₂ film) (thickness: 100nm)) arid a quartz substrate at room temperature in the same manner asin Example 16, except for using an indium oxide (97 atom % (metalcontent))−gallium oxide (2 atom % (metal content))−scandium oxide (1atom % (metal content)) target (Ga/(In+Ga)=0.021, Sc/(In+Ga+Sc)=0.01)obtained in the same manner as in Example 9, and an etch-stopper thinfilm transistor shown in FIG. 19 was produced, and evaluated.

A normally-off thin film transistor having a field-effect mobility of62.5 cm²/V·sec and an on-off ratio of 3.5×10⁶ was thus obtained. Thethin film transistor had clear pinch-off output characteristics. The Svalue was 0.7. A sift in threshold voltage (Vth) after applying avoltage of 20 V to the gate for 100 minutes was 0.2 V or less.

The thin film formed on the quartz glass substrate was heated, andevaluated in the same manner as in Example 12. As a result of XRDanalysis of the thin film, a peak indicating an indium oxide bixbyitestructure was observed. The peak intensity obtained after heating thequartz glass substrate at 350° C. was almost equal to that obtainedafter heating the quartz glass substrate at 450° C. (i.e., asingle-phase bixbyite structure was observed). The lattice constant ofthe thin film was 10.0728 Å, and the carrier concentration was1.1<10¹⁸/cm⁻³.

Comparative Example 6 Production of Thin Film Transistor

A thin film transistor was formed on a conductive silicon substrate(provided with a thermally oxidized film (SiO₂ film) (thickness: 100nm)), and the characteristics thereof were evaluated in the same manneras in Example 12, except for using an indium oxide (100 atom % (metalcontent)) target.

A normally-on thin film transistor having a field-effect mobility of25.2 cm²/V·sec and an on-off ratio of 10⁷ was thus obtained. The thinfilm transistor had clear pinch-off output characteristics. The S valuewas 1.4.

A thin film formed on a quartz glass substrate was heated, and evaluatedin the same manner as in Example 12. As a result of XRD analysis of thethin film, a peak indicating an indium oxide bixbyite structure wasobserved. The peak intensity obtained after heating the quartz glasssubstrate at 350° C. was almost equal to that obtained after heating thequartz glass substrate at 450° C. (i.e., a single-phase bixbyitestructure was observed). The lattice constant of the thin film was10.1250 Å, and the carrier concentration was 6.5×10¹⁸/cm⁻³.

Comparative Example 7 Production of Thin Film Transistor

A thin film transistor was formed on a conductive silicon substrate(provided with a thermally oxidized film (SiO₂ film) (thickness: 100nm)), and the characteristics thereof were evaluated in the same manneras in Example 12, except for using an indium oxide (70 atom % (metalcontent))-gallium oxide (30 atom % (metal content)) target(Ga/(In+Ga)=0.3).

A normally-on thin film transistor having a field-effect mobility of15.7 cm²/V·sec and an on-off ratio of 10⁶ was thus obtained. The thinfilm transistor had clear pinch-off output characteristics. The S valuewas 1.4.

A thin film formed on a quartz glass substrate was heated, and evaluatedin the same manner as in Example 12. As a result of XRD analysis of thethin film, a peak indicating an indium oxide bixbyite structure was notobserved. It was determined that the thin film formed of indium oxideand gallium oxide was amorphous based on the above results. The carrierconcentration of the thin film was 10.2×10¹⁸/cm⁻³.

The amorphous thin film formed of indium oxide and gallium oxide wasimmersed in a mixed acid of phosphoric acid, acetic acid, and nitricacid (25° C.) for 10 minutes to evaluate acid resistance. As a result,the amorphous thin film was dissolved in the mixed acid. This indicatesthat the amorphous thin film did not have acid resistance.

Comparative Example 8 Production of Thin Film Transistor

A thin film transistor was formed on a conductive silicon substrate(provided with a thermally oxidized film (SiO₂ film) (thickness: 100nm)), and the characteristics thereof were evaluated in the same manneras in Example 12, except for using an indium oxide (86 atom % (metalcontent))-gallium oxide (14 atom % (metal content)) target(Ga/(In+Ga)=0.14).

A normally-on thin film transistor having a field-effect mobility of22.3 cm²/V·sec and an on-off ratio of 10⁶ was thus obtained. The thinfilm transistor had clear pinch-off output characteristics. The S valuewas 1.3.

A thin film formed on a quartz glass substrate was heated, and evaluatedin the same manner as in Example 12. As a result of XRD analysis of thethin film, a clear peak indicating an indium oxide bixbyite structurewas not observed. It was determined that most of the thin film formed ofindium oxide and gallium oxide was amorphous based on the above results.The carrier concentration of the thin film was 10.2×10¹⁸/cm⁻³.

The amorphous thin film formed of indium oxide and gallium oxide wasimmersed in a mixed acid of phosphoric acid, acetic acid, and nitricacid (25° C.) for 10 minutes to evaluate acid resistance. As a result,the amorphous thin film was dissolved in the mixed acid. This indicatesthat the amorphous thin film did not have acid resistance.

A micro-arc was observed during a sputtering discharge.

FIG. 20 shows the amount of Ga or (Ga+X) added and the lattice constantdistribution of Examples 12 to 18 and Comparative Example 6. In FIG. 20,the symbol “E” indicates “Example”, and the symbol “C” indicates“Comparative Example”. As shown in FIG. 20, the thin films of Examples12 to 18 had a small lattice constant.

INDUSTRIAL APPLICABILITY

The oxide sintered body according to the invention may be used as asputtering target. A thin film formed using the sputtering targetaccording to the invention may be used for a thin film transistor.

The contents of the documents referred to herein are incorporated hereinby reference.

1.-15. (canceled)
 16. An oxide thin film comprising indium oxide andgallium solid-solved therein, the oxide thin film having an atomic ratio“Ga/(Ga+In)” of 0.001 to 0.08, containing indium and gallium in anamount of 80 atom % or more based on total metal atoms, and having anIn₂O₃ bixbyite structure, wherein the oxide thin film comprises gallium,indium and oxygen as its essential components and may comprise scandium,yttrium, aluminum, or impurities, provided that the oxide thin film doesnot comprise any other components other than gallium, indium, scandium,yttrium, aluminum, oxygen and impurities.
 17. (canceled)
 18. The oxidethin film according to claim 16, the oxide thin film having an atomicratio “Ga/(Ga+In)” of 0.005 to 0.08.
 19. The oxide thin film accordingto claim 16, wherein the bixbyite structure has a lattice constant of10.01 Å or more and less than 10.118 Å.
 20. The oxide thin filmaccording to claim 16, wherein the oxide thin film comprises dispersedgallium aggregates having a diameter of less than 1 μm.
 21. The oxidethin film according to claim 16, further comprising one or two or moreoxides selected from yttrium oxide, scandium oxide, and aluminum oxide.22. The oxide thin film according to claim 21, the oxide thin filmhaving a content of the one or two or more oxides selected from yttriumoxide, scandium oxide, aluminum oxide, and boron oxide, of 0.01 to 5atom %.
 23. A thin film transistor comprising the oxide thin filmaccording to claim
 16. 24. The thin film transistor according to claim23, the thin film transistor being a channel-etch thin film transistor.25. The thin film transistor according to claim 23, the thin filmtransistor being an etch-stopper thin film transistor.
 26. A method ofproducing a thin film transistor comprising forming an oxide thin filmusing the sputtering target according to claim 14, and crystallizing theoxide thin film by heating the oxide thin film in an oxygen atmosphere.27. The method according to claim 26, wherein the oxide thin film isformed in a film forming gas having an oxygen content of 10 vol % ormore.
 28. The method according to claim 26, wherein the oxide thin filmis crystallized by heating the oxide thin film at 250 to 500° C. for 0.5to 1200 minutes.
 29. The method according to claim 26, furthercomprising forming an oxide insulator layer on the oxide thin film thathas been heated.
 30. A semiconductor device comprising the thin filmtransistor according to claim
 23. 31. A thin film transistor comprisingthe oxide thin film according to claim
 16. 32. The thin film transistoraccording to claim 31, the thin film transistor being a channel-etchthin film transistor.
 33. The thin film transistor according to claim31, the thin film transistor being an etch-stopper thin film transistor.34. A semiconductor device comprising the thin film transistor accordingto claim 31.